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IGBT单管
Part Number Download Status Product Grade Diode Type

VCES

(V)

Ic@Tc=100℃

(A)

Ic@Tc=25℃

(A)

Vcesat

(V)

Switching Frequency

(KHZ)

Eon

(mJ)

Eoff

(mJ)

Short Current Withstand Time

(us)

Type Package
CGWT30N65F2KAD

Active
industrial
silicon
650
30
60
1.7
20-45
0.82
0.36
7
FST2.0
TO-247
CGWT40N120F2KAD

Active
industrial
silicon
1200
40
80
1.7
20-45
3
1.4
5
FST2.0
TO-247
CGWT40N120F2LAD

Active
industrial
silicon
1200
40
80
1.5
0-8
2.8
1.9
7
FST2.0
TO-247
CGWT40N120F2LAN

Active
industrial
-
1200
40
80
1.5
0-8
2.5
1.7
5
FST2.0
TO-247
CGWT40N120F2LANM

Active
automotive
-
1200
40
80
1.5
0-8
2.5
1.7
5
FST2.0
TO-247
CGWT40N65F2KA

Active
industrial
silicon
650
40
80
1.7
20-45
1
0.32
7
FST2.0
TO-247
CGWT40N65F2KAD

Active
industrial
silicon
650
40
80
1.7
20-45
1.23
0.34
5
FST2.0
TO-247
CGWT40N65F2KAN

Active
industrial
-
650
40
80
1.7
20-45
0.34
1.23
5
FST2.0
TO-247
CGWT40N65F2KAQ

Ready
industrial
silicon
650
40
80
1.7
20-45
1.2
0.32
7
FST2.0
TO-247
CGWT80N65F2KAD

Active
industrial
silicon
650
80
100
1.75
20-45
2.69
0.87
7
FST2.0
TO-247
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