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IGBT单管
Part Number Download Status Product Grade Diode Type

VCES

(V)

Ic@Tc=100℃

(A)

Ic@Tc=25℃

(A)

Vcesat

(V)

Switching Frequency

(KHZ)

Eon

(mJ)

Eoff

(mJ)

Short Current Withstand Time

(us)

Type Package
CGWT80N65F2KAS

Active
industrial
SiC
650
80
100
1.7
20-45
1.87
0.99
7
FST2.0
TO-247
CGWT80N65F2SAD

Active
industrial
silicon
650
80
100
1.55
8-20
1.97
1.19
3
FST2.0
TO-247
Baidu
sogou